sst/u5545nl series vishay siliconix new product document number: 72119 s-03162?rev. a, 14-feb-03 www.vishay.com 7-1 monolithic n-channel jfet duals product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i g max (pa) v gs1 - v gs2 max (mv) u5545nl -0.5 to -4.5 -50 1.5 -50 5 sst/U5546NL - 0.5 to - 4.5 -50 1.5 -50 10 sst/u5547nl - 0.5 to - 4.5 -50 1.5 -50 15 features benefits applications anti latchup capability monolithic design high slew rate low offset/drift voltage low gate leakage: 3 pa low noise high cmrr: 100 db external substrate bias?avoids latchup tight differential match vs. current improved op amp speed, settling time accuracy minimum input error/trimming requirement insignificant signal loss/error voltage high system sensitivity minimum error with large input signal wideband differential amps high-speed, temp-compensated, single-ended input amps high-speed comparators impedance converters description the sst/u5545nl series are monolithic dual n - channel jfets designed to provide high input impedance (i g < 50 pa) for general purpose differential amplifiers. the u5545nl features minimum system error and calibration (5-mv offset maximum). pins 4 and 8 on the sst series and pin 4 on the u series part numbers enable the substrate to be connected to a positive, external bias (v dd ) to avoid latchup. the sst5546nl/47nl in the so-8 package provide ease of manufacturing. the symmetrical pinout prevents improper orientation. these part number are available with tape-and-reel options for compatibility with automatic assembly methods. the hermetically sealed to-78 package is available with full military processing. to-78 top view u5545nl U5546NL u5547nl g 1 s 1 d 1 g 2 d 2 s 2 1 2 3 7 6 4 s 1 substrate d 1 g 2 g 1 d 2 substrate s 2 narrow body soic 5 6 7 8 2 3 4 1 top view marking codes: sst5546nl - (5546nl) sst5547nl - (5547nl) 5 case, substrate absolute maximum ratings gate-drain, gate-source voltage -50 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead tempe rature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage temperature -65 to 200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction t emperature -55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation : per side a 250 mw . . . . . . . . . . . . . . . . . . . . . . . . total b 500 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2 mw/ c above 25 c b. derate 4 mw/ c above 25 c
sst/u5545nl series vishay siliconix new product www.vishay.com 7-2 document number: 7211 9 s-03162?rev. a, 14-feb-0 3 specifications (t a = 25 c unless otherwise noted) limits u5545nl sst/U5546NL sst/u5547nl parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = -1 a, v ds = 0 v -57 -50 -50 -50 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 0.5 na -2 -0.5 -4.5 -0.5 -4.5 -0.5 -4.5 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 3 0.5 8 0.5 8 0.5 8 ma gate reverse current i gss v gs = -30 v, v ds = 0 v -10 -100 -100 -100 pa gate reverse current i gss t a = 150 c -20 -150 -150 -150 na gate operating current i g v dg = 15 v, i d = 200 a -3 -50 -50 -50 pa gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance b g fs v ds = 15 v, v gs = 0 v 2.5 1.5 6.0 1.5 6.0 1.5 6.0 ms common-source output conductance b g os v ds = 15 v , v gs = 0 v f = 1 khz 2 25 25 25 s common-source input capacitance c iss v ds = 15 v, v gs = 0 v 3.5 6 6 6 pf common-source reverse transfer capacitance c rss v ds = 15 v , v gs = 0 v f = 1 mhz 1.3 2 2 2 pf equivalent input noise voltage e n v ds = 15 v, i d = 200 a f = 10 hz 20 180 nv ? hz noise figure nf r g = 1 m 0.1 3.5 db matching differential | v v | v dg = 15 v, i d = 50 a 5 10 15 mv differential gate-source v oltage | v gs1 v gs2 | v dg = 15 v, i d = 200 a 5 10 15 mv gate-source v oltage differential change with temperature | v gs1 ?v gs2 | t v dg = 15 v, i d = 200 a t a = - 55 to 125 c 10 20 40 v/ c saturation drain current ratio c i dss1 i dss2 v ds = 15 v, v gs = 0 v 0.98 c 0.95 1 0.9 1 0.9 1 transconductance ratio c g fs1 g fs2 v ds = 15 v, i d = 200 a f = 1 khz 0.99 c 0.97 1 0.95 1 0.9 1 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nqp b. pulse test: pw 300 s duty cycle 3%. c. assumes smaller value in the numerator.
sst/u5545nl series vishay siliconix new product document number: 72119 s-03162?rev. a, 14-feb-03 www.vishay.com 7-3 typical characteristics (t a = 25 c unless otherwise noted) 5 0-5 -4 -3 -2 -1 4 2 1 0 030 20 10 40 50 3 2.6 2.2 1 3 drain current and transconductance vs. gate-source cutoff voltage gate leakage current v gs(off) - gate-source cutoff voltage (v) v dg - drain-gate voltage (v) 0.1 pa 10 pa 1 pa i dss @ v ds = 15 v, v gs = 0 v g fs @ v dg = 15 v, v gs = 0 v f = 1 khz g fs i dss i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c 200 a 100 pa 1 na 10 na 100 na 5 01216 8 420 4 3 2 1 0 output characteristics output characteristics v ds - drain-source voltage (v) v ds - drain-source voltage (v) -0.2 v -0.4 v -0.6 v -0.3 v -0.9 v -0.6 v -2.1 v -1.5 v -0.8 v -1.0 v -1.2 v -1.2 v -1.8 v v gs(off) = -2 v v gs = 0 v 5 4 3 2 1 0 01216 8 420 v gs = 0 v v gs(off) = -3 v 2 1.6 1.2 0.8 0.4 0 output characteristics output characteristics v ds - drain-source voltage (v) v ds - drain-source voltage (v) -0.2 v -0.4 v -0.6 v -0.8 v -1.0 v -1.2 v -1.4 v v gs(off) = -2 v v gs = 0 v 2.5 2.0 1.5 1.0 0.5 0 0 0.6 0.8 0.4 0.2 1 v gs = 0 v v gs(off) = -3 v -0.3 v -0.9 v -0.6 v -2.1 v -1.5 v -1.2 v -2.4 v -1.8 v 1.8 1.4 50 a i g @ i d = 200 a -1.6 v -1.4 v 0 0.6 0.8 0.4 0.2 1 -2.4 v 50 a g fs - forward transconductance (ms) i dss - saturation drain current (ma) i g - gate leakage i d - drain current (ma) i d - drain current (ma) i d - drain current (ma) i d - drain current (ma)
sst/u5545nl series vishay siliconix new product www.vishay.com 7-4 document number: 7211 9 s-03162?rev. a, 14-feb-0 3 typical characteristics (t a = 25 c unless otherwise noted) 0.01 0.1 1 10 1 0 -1.5 -1.0 -0.5 -2.0 -2.5 4 3 2 1 0 0.01 0.1 1 130 120 80 110 100 90 0.01 0.1 1 100 10 1 100 5 0.1 1 0.01 100 80 60 40 20 0 transfer characteristics gate-source differential voltage vs. drain current voltage differential with temperature vs. drain current common mode rejection ratio vs. drain current cmrr (db) v gs - gate-source voltage (v) i d - drain current (ma) i d - drain current (ma) i d - drain current (ma) i d - drain current (ma) u5545nl t a = -55 c 125 c v gs(off) = -2 v v dg = 15 v t a = 25 c 5 - 10 v v gs(off) = -3 v circuit voltage gain vs. drain current sst/u5547nl on-resistance vs. drain current i d - drain current (ma) 0.01 0.1 1 1 k 800 600 400 200 0 v gs(off) = -2 v a v g fs r l 1 r l g os r l 10 v i d assume v dd = 15 v, v ds = 5 v v ds = 10 v v gs(off) = -2 v v gs(off) = -3 v 25 c v dg = 15 v t a = 25 to 125 c t a = - 55 to 25 c v dg = 10 - 20 v (mv) v gs1 v gs2 - v/ c () t v gs1 v gs2 - v gs1 v gs2 - v dg cmrr = 20 log r ds(on) - drain-source on-resistance ( ? ) i d - drain current (ma) a v - voltage gain u5545nl sst/u5547nl
sst/u5545nl series vishay siliconix new product document number: 72119 s-03162?rev. a, 14-feb-03 www.vishay.com 7-5 typical characteristics (t a = 25 c unless otherwise noted) 10 100 1 k 100 k 10 k 10 0 -12 -16 -20 -8 -4 8 6 4 2 0 v gs - gate-source voltage (v) common-source input capacitance vs. gate-source voltage - input capacitance (pf) c iss v ds = 0 v 5 v f = 1 mhz 5 0 -12 -20 -16 -8 -4 4 3 2 1 0 common-source reverse feedback capacitance vs. gate-source voltage - reverse feedback capacitance (pf) c rss v gs - gate-source voltage (v) v ds = 0 v 5 v 15 v f = 1 mhz 16 12 8 4 0 20 equivalent input noise voltage vs. frequency f - frequency (hz) v ds = 10 v i d @ 200 a v gs = 0 v 2.5 2.0 1.5 1.0 0.5 0 0.01 0.1 1 output conductance vs. drain current i d - drain current (ma) t a = -55 c 125 c 0.01 0.1 1 2.5 2.0 1.5 1.0 0.5 0 common-source forward transconductance vs. drain current i d - drain current (ma) t a = -55 c 125 c 1 k 0 -3 -5 -4 -2 -1 800 600 400 200 0 10 8 6 4 2 0 on-resistance and output conductance vs. gate-source cutoff voltage v gs(off) - gate-source cutoff voltage (v) r ds @ i d = 100 ma, v gs = 0 v g os @ v ds = 15 v, v gs = 0 v, f = 1 khz r ds g os 25 c 25 c v gs(off) = -2 v v ds = 15 v f = 1 khz v gs(off) = -2 v v ds = 15 v f = 1 khz 15 v s) g os - output conductance ( e n - noise voltage nv / hz g fs - forward transconductance (ms) r ds(on) - drain-source on-resistance ( ? ) g os - output conductance ( s)
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